## 13003 equivalent transistor

13003 transistor equivalent selection needs to satisfy different electrical characteristics and physical specifications of 13003 NPN BJT transistor.

At electronic circuits equivalent component selections had applications in circuit designing and repair replacement situations, in some situations, we need to upgrade the existing circuit into a more efficient circuit. Here we had to replace the components with higher electrical characteristics components.

In this, we are explaining about the MJE13003 transistor equivalent, based on a comparison of electrical and physical specifications we get an idea to replace 13003 transistors with the listed transistors.

## 13003 transistor equivalent

### TTD1409 transistor

It is also an NPN BJT transistor, the collector to emitter voltage (400v) and the package of both 13003 and TTD1409 transistors are the same (TO-126).

The pinout of both the transistor are different, for 13003 it is the emitter, collector, and base but at TTD1409 it is base, emitter, and collector.

The base to emitter voltage of 13003 is 700v and the collector to base voltage of TTD1409 is 600v.

The emitter to base voltage of 13003 is 9v and for TTD1409 it is 5v.

And the max collector current of 13003 is 1.5A and at TTD1409b it is 6A, the peak current of 13003 is 3A and for TTD1409 it is 10A. Then the base current of 13003 is 0.75A and for the TTD1409 it is 1A.

The power dissipation of 13003 is 40w and for the TTD1409 it is 25w, the junction temperature at 13003 is -40 to 150˚C and at TTD1409 it is -55 to 150˚C.

The transition frequency of 13003 is 4 to 10MHz but for TTD1409 it is 150MHz and for the DC gain of 13003 it is 5 to 25HFe and for the TTD1409 it is 200HFe.

The thermal resistance of the 13003 transistor case is 3.1˚C/W but the TTD1409 transistor is not found.

## 5302D transistor

The 5302D is an NPN BJT transistor, the package (TO-126), pinout, and collector to emitter voltage of both transistors are the same.

Then the base to emitter voltage of 13003 is 700v and collector to base voltage of 5302d is 800v, and the emitter to base voltage of 13003 is 9v and for 5302d it is 10v.

The max collector current of 13003 is 1.5A and for the 5302D it is 2A and the peak current of 13003 is 3A and for the 5302D it is 4A.

The base current of 13003 is 0.75A and for the 5302D it is 1A.

Power dissipation of at 13003 is 40w and for the 5302D it is 12.5w and the junction temperature of 13003 is -40 to 150˚C and on 5302D it is -65 to 150˚C.

The transition frequency at the 13003 is 4 to 10MHz and at 5302D it is not found, then the DC gain of 13003 is 5 to 25HFe and on the 10 to 30HFe.

Then the thermal resistance of 13003 is 3.1˚C/W and for the 5302D it is 10˚C/W.