2n3819 JFET datasheet
2n3819 is an n-channel JFET transistor used for high-quality amplification and high-speed switching operations, these are possible due to the electrical characteristics of the 2n3819 JFET transistor, and in this article, we explain the specifications and features of the 2n3819 transistor using its datasheet.
Features & specifications of 2n3819 JFET transistor
- 2n3819 is an N-channel JFET transistor
- Drain to source voltage (VDS) is 25V
- Drain to gate voltage (VDG) is 25V
- Gate to the source (VGS) is 25V
- Gate to source breakdown voltage (V (BR) GSS) is -35V
- Gate to source cutoff voltage (VGS (GSS)) is -8V
- Gate to source forward voltage (VGS (F)) is 7V
- Continuous gate current (IG) is 10mA
- Gate operation current (IG) is -20pA
- Gate reverse current (IGSS) is -2uA
- Drain cutoff current (ID (OFF)) is 2pA
- Saturation drain current (IDSS) is 2 to 20mA
- Power dissipation (PD) is 360mW
- Drain source on-resistance RDS (ON) is 150Ω
- Cutoff frequency (F (Yfs)) is 700MHz
- Wideband high gain
- Very high system sensitivity
- High quality of amplification
- High-speed switching operation
- High and low-level signal amplification
- Medium to high frequency
- Low noise circuits
PINOUT configuration & PACKAGE details of 2n3819 JFET
The PINOUT pattern used at 2n3819 JFET is SGD, we know it is an amplification and switching device, so the terminal configuration is a very important factor to consider.
The package used at 2n3819 transistor is TO-226 and TO-92, they had two package types used for different circuits, the TO-92 is a smaller version to get more compatibility and the TO-226 can handle more power, so they need to be used at high-end applications.
Electrical characteristic description of 2n3819 JFET transistor
Drain to source voltage, drain to gate voltage and gate to source voltage of 2n3819 JFET transistor is 25V, the voltage value shows it is a low power transistor, naturally had applications at general-purpose applications.
Gate to source breakdown voltage is -35V, this is a large voltage value for a low-power JFET transistor.
Gate to source cutoff voltage is -8v and gate to source forward voltage is 0.7v, both these values are important for switching operations.
Gate current is 10mA, it is the maximum load value allowed for this transistor, and the saturation drain current is 2 to 20mA, which is more helpful at switching operations.
Gate reverse current is -2uA, gate operation current is -2pA, and drain cutoff current is 2pA, each of these current values is important for faster switching of transistor.
Drain to source on-resistance value is 150Ω, it is the resistance between drain and source terminal, the on-resistance is lower for this JFET transistor.
The cutoff frequency of the 2n3819 JFET transistor is 700MHz, which means this is the maximum frequency value at the operation, this is a higher value for a JFET transistor and this is why this transistor has been used at high-frequency circuits.
Applications of 2n3819 JFET transistor
- High-frequency amplifier and mixer circuits
- Oscillator circuits
- Low capacitance switching circuits
- High-frequency circuits
- High-speed switching circuits
- The low noise amplifier circuit
2n3819 JFET transistor AF amplifier circuit
The figure shows a small AF amplifier circuit using a 2n3819 JFET transistor, the amplification happened when the audio signal reaches the JFET, it works as a preamplifier on a circuit.
2n3819 JFET transistor equivalent
The transistors such as 2n4416, nte312, 2n5638, 2n5640, 2sk162, and 2sk518 are the equivalent transistors of 2n3819 JFET transistor.
The electrical specifications of each of them are different from the 2n3819 transistor, but we can easily replace them, but the PINOUT pattern is a little bit different from 2n3819, so we need to check and verify before replacement.
2N3819 vs MPF102
|Drain to source voltage (VDS)||25V||25V|
|Drain to gate voltage (VDG)||25V||25V|
|Gate to source voltage (VGS)||25V||25V|
|Gate to source breakdown voltage (V (BR) GSS)||-35V||–|
|Drain current (IG)||10mA||10mA|
|Forward gate current (IG (F))||10mA||–|
|Cut-off frequency (F(Yfs))||700MHz||–|
|Gate to source cut-off voltage (VGS (OFF))||-8.0V||-8V|
|Zero-source voltage-drain current (IDSS)||2 to 25mA||2 to 20mA|
Characteristics curves of 2n3819 JFET transistor
The figure shows the output characteristics of the 2n3819 JFET transistor, we have two graphs with two gates to source voltage values.
When the drain current and drain to source voltage values increases accordingly and touch a saturation level.