2n5088 is a general-purpose NPN transistor which had main applications on amplifier circuits, high gain producing ability of the 2n5088 transistor will be utilized to make amplifier circuits.
so you are planning to design a amplifier circuit for you use. please use this transistor. This post we add all explained details about 2n5088 transistor , it will help for you circuit design
Electrical specification of 2n5088 transistor
- 2n5088 is a general-purpose NPN transistor
- Collector to base voltage (VCB) is 35V
- Collector to emitter voltage (VCE) is 30V
- Emitter to base voltage (VEB) is 5V
- Collector to emitter saturation voltage (VCE (sat)) is 5V
- Collector current (IC) is 100Ma
- Current cutoff current (ICB) is 50nA
- Power dissipation (PD) is 625mW
- Thermal resistance, junction to case is 3°C/W
- Junction Temperature (TJ) is -65 to +150°C
- DC gain is 300 to 900hFE
- Transition frequency (FT) is 50MHz
- Noise figure (NF) is 3dB
- Small signal DC current gain is 350 to 1400hFE
PINOUT CONFIGURATION & PACKAGE DETAILS OF 2N5088 transistor
The 2n5088 transistor had a EBC PINOUT pattern, it is a common PINOUT used for the general purpose low power transistor
The package details of the 2n5088 transistor are the TO-92 package made with a mixture of epoxy and plastic material.
2n5088 transistor SMD version
The MMBT5088 is the SMD version of the 2n5088 transistor, it is a common surface mount transistor that has applications of modern electronic boards, the main electrical specifications of both are the same.
But the power dissipation and thermal resistance value of both 2n5008 and MMBT5088 are different.
so you adding the smd version of 2n5008 transistor, plz change the circuit power. only you need some changes on you power section.
SMD version transistor package
The MMBT5088 transistor had the SOT-23 package and the terminal arrangement is like base and emitter on one side, then collector terminal is on another side.
Electrical characteristics & application description of 2n5088 transistor
Collector to base voltage is 35v, collector to emitter voltage is 30v, and emitter to base voltage is 4.5v, the lower voltage value indicates 2n5088 is a low-power general purpose transistor.
Collector to emitter saturation voltage is 0.5v, the voltage saturation ability shows the transistor can switch very faster and it is a good option at switching applications
The collector current of 2n5088 is 100mA, this is the maximum load allowed at this transistor.
DC current gain
The DC gain value is 300 to 900hFE at this transistor, the higher gain ability is the specialty of this transistor, on the application like amplifier circuits gain value will be utilized.
Small-signal applications the DC gain is much higher up to 350 to 1400hFE.
The noise figure of the 2n5088 transistor is 2dB, this shows the noise produces at the operation when 2n5088 works as an amplifier.
The transition frequency of 2n5088 is 50MHz, this shows the maximum operating frequency ability of a transistor.
Dissipation & temperature capacity
The power dissipation value at 2n5088 transistor is 625mW, it is the normal value at general-purpose transistors.
The junction or storage temperature value of this transistor is -55 to +150°C, the peak temperature value indicates the heat capacity of the 2n5088 transistor.
Uses of 2n5088 transistor
- Low noise amplifier circuits
- Darlington pair
- Push-pull amplifier
- MIC amplifier
- Sensor circuits
2n5088 transistor equivalent
The transistor such as 2n5089, 2n4401, bc106, mpsa18, and mps6602 are the equivalent transistors for 2n5088.
All the transistors on this list had almost the same specifications, but we need to double-check the specs before the replacement process.
2n5088 vs 2n3904 vs 2n5089
|Collector to base voltage (VCB)||35V||60V||30V|
|Collector to emitter voltage (VCE)||30V||40V||25V|
|Emitter to base voltage (VEB)||4.5V||6V||4.5V|
|Collector current (IC)||100mA||200mA||100mA|
|Collector cut-off current (ICB)||50nA||50nA||45nA|
|Junction temperature (TJ)||-55 to +150°C||-55 to +150°C||-55 to +150°C|
|Transition frequency (FT)||50MHz||300MHz||50MHz|
|Gain (hFE)||300 to 900hFE||30 to 300hFE||400 to 1200hFE|
|Small signal DC gain (hFE)||350 to 1400hFE||100 to 400hFE||450 to 1800hFE|
|SMD version||MMBT5088||MMBT3904 & PZT3904||MMBT5089|
The comparison table of 2n5088 vs 2n3904 vs 2n5089 transistors shows that these three transistors had almost the same specifications.
From the entire specs data of three transistors, we can see the only main difference at DC gain values, if it is normal to gain or small signal DC gain, it is very much different for each transistor.
Characteristics curves of 2n5088 transistor
The figure shows the collector-emitter saturation voltage vs collector current characteristics curve, the temperature difference is the reference point of this curve.
At the characteristic curve, we can see at the initial stage the collector current increases very slowly and saturation voltage stuck at a particular value, then after a point, it increases with the collector current.
The figure shows the power dissipation vs temperature characteristics curve of 2n5088 transistor two package types.
Naturally, the power dissipation value is higher for the 2n5088 TO-92 version and the MMBT5088 (SOT-23) version had only 350Mw, based on the datasheet.
But the storage of junction temperature values of both transistors is the same.