2n5088 transistor
2n5088 transistor

2n5088 is a general-purpose NPN transistor which had main applications on amplifier circuits, high gain producing ability of the 2n5088 transistor will be utilized to make amplifier circuits.

so you are planning to design a amplifier circuit for you use. please use this transistor. This post we add all explained details about 2n5088 transistor , it will help for you circuit design

Electrical specification of 2n5088 transistor 

  • 2n5088 is a general-purpose NPN transistor
  • Collector to base voltage (VCB) is 35V
  • Collector to emitter voltage (VCE) is 30V
  • Emitter to base voltage (VEB) is 5V
  • Collector to emitter saturation voltage (VCE (sat)) is 5V
  • Collector current (IC) is 100Ma
  • Current cutoff current (ICB) is 50nA
  • Power dissipation (PD) is 625mW
  • Thermal resistance, junction to case is 3°C/W
  • Junction Temperature (TJ) is -65 to +150°C
  • DC gain is 300 to 900hFE
  • Transition frequency (FT) is 50MHz
  • Noise figure (NF) is 3dB
  • Small signal DC current gain is 350 to 1400hFE

PINOUT CONFIGURATION & PACKAGE DETAILS OF 2N5088 transistor

PINOUT CONFIGURATION & PACKAGE DETAILS OF 2N5088 transistor
PINOUT CONFIGURATION & PACKAGE DETAILS OF 2N5088 transistor
  1. Emitter
  2. Base
  3. collector

The 2n5088 transistor had a EBC PINOUT pattern, it is a common PINOUT used for the general purpose low power transistor

The package details of the 2n5088 transistor are the TO-92 package made with a mixture of epoxy and plastic material.

PINOUT CONFIGURATION & PACKAGE DETAILS OF 2N5088 transistor
PINOUT CONFIGURATION & PACKAGE DETAILS OF 2N5088 transistor

2n5088 transistor SMD version

The MMBT5088 is the SMD version of the 2n5088 transistor, it is a common surface mount transistor that has applications of modern electronic boards, the main electrical specifications of both are the same.

But the power dissipation and thermal resistance value of both 2n5008 and MMBT5088 are different.

so you adding the smd version of 2n5008 transistor, plz change the circuit power. only you need some changes on you power section.

SMD version transistor package

The MMBT5088 transistor had the SOT-23 package and the terminal arrangement is like base and emitter on one side, then collector terminal is on another side.

Electrical characteristics & application description of 2n5088 transistor

Voltage characteristic

Collector to base voltage is 35v, collector to emitter voltage is 30v, and emitter to base voltage is 4.5v, the lower voltage value indicates 2n5088 is a low-power general purpose transistor.

Collector to emitter saturation voltage is 0.5v, the voltage saturation ability shows the transistor can switch very faster and it is a good option at switching applications

Current characteristic

The collector current of 2n5088 is 100mA, this is the maximum load allowed at this transistor.

DC current gain

The DC gain value is 300 to 900hFE at this transistor, the higher gain ability is the specialty of this transistor, on the application like amplifier circuits gain value will be utilized.

Small-signal applications the DC gain is much higher up to 350 to 1400hFE. 

Noise figure

The noise figure of the 2n5088 transistor is 2dB, this shows the noise produces at the operation when 2n5088 works as an amplifier.

Transition frequency

The transition frequency of 2n5088 is 50MHz, this shows the maximum operating frequency ability of a transistor.

Dissipation & temperature capacity

The power dissipation value at 2n5088 transistor is 625mW, it is the normal value at general-purpose transistors.

The junction or storage temperature value of this transistor is -55 to +150°C, the peak temperature value indicates the heat capacity of the 2n5088 transistor.

Uses of 2n5088 transistor

  • Low noise amplifier circuits
  • Darlington pair
  • Push-pull amplifier
  • Preamplifier
  • MIC amplifier
  • Sensor circuits

2n5088 transistor equivalent

The transistor such as 2n5089, 2n4401, bc106, mpsa18, and mps6602 are the equivalent transistors for 2n5088.

All the transistors on this list had almost the same specifications, but we need to double-check the specs before the replacement process.

2n5088 vs 2n3904 vs 2n5089  

Characteristics 2n5088 2n3904 2n5089
Collector to base voltage (VCB) 35V 60V 30V
Collector to emitter voltage (VCE) 30V 40V 25V
Emitter to base voltage (VEB) 4.5V 6V 4.5V
Collector current (IC) 100mA 200mA 100mA
Collector cut-off current (ICB) 50nA 50nA 45nA
Power dissipation 625mW 625mW 625mW
Junction temperature (TJ) -55 to +150°C -55 to +150°C -55 to +150°C
Transition frequency (FT) 50MHz 300MHz 50MHz
Noise (N) 2dB 5dB 2dB
Gain (hFE) 300 to 900hFE 30 to 300hFE 400 to 1200hFE
Small signal DC gain (hFE) 350 to 1400hFE 100 to 400hFE 450 to 1800hFE
Package TO-92 TO-92 TO-92
SMD version MMBT5088 MMBT3904 & PZT3904 MMBT5089

The comparison table of 2n5088 vs 2n3904 vs 2n5089 transistors shows that these three transistors had almost the same specifications.

From the entire specs data of three transistors, we can see the only main difference at DC gain values, if it is normal to gain or small signal DC gain, it is very much different for each transistor.

Characteristics curves of 2n5088 transistor

collector-emitter saturation voltage vs collector current
collector-emitter saturation voltage vs collector current

The figure shows the collector-emitter saturation voltage vs collector current characteristics curve, the temperature difference is the reference point of this curve.

At the characteristic curve, we can see at the initial stage the collector current increases very slowly and saturation voltage stuck at a particular value, then after a point, it increases with the collector current.

power dissipation vs temperature characteristics curve
power dissipation vs temperature characteristics curve

The figure shows the power dissipation vs temperature characteristics curve of 2n5088 transistor two package types.

Naturally, the power dissipation value is higher for the 2n5088 TO-92 version and the MMBT5088 (SOT-23) version had only 350Mw, based on the datasheet.

But the storage of junction temperature values of both transistors is the same.

Datasheet

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