2N5458 transistor

2N5458 General Purpose JFETs transistor
2N5458 General Purpose JFETs transistor

2N5458 is an n-channel JFET transistor, have applications at switching and audio amplifier circuit due to its high gain and lower cutoff voltage electrical property.

Specifications & features of 2N5458 transistor

  • 2N5458 is an n-channel low power JFET transistor
  • Drain to source voltage (VDS) is 25vdc
  • Drain to gate voltage (VDG) is 25vdc
  • Reverse gate to source voltage (VGS (REV)) is -25vdc
  • Gate current (IG) is 10mA
  • Gate to source breakdown voltage (V (BR) GS) is -25v
  • Gate to source cutoff voltage is –5 to -7.0v
  • Power dissipation (PD) is 310mW
  • Junction temperature (TJ) is -65 to 150°C
  • High gain
  • High AC input impedance
  • High DC input resistance
  • Low transfer and input capacitance
  • Low cross-modulation and intermodulation distortion
  • Drain and source interchangeable

PINOUT & PACKAGE DETAILS OF 2N5458 TRANSISTOR

PINOUT & PACKAGE DETAILS OF 2N5458 TRANSISTOR
PINOUT & PACKAGE DETAILS OF 2N5458 TRANSISTOR

The PINOUT configuration used on the 2N5458 JFET transistor is DSG, it is a common JFET pattern used for low power transistor devices.

The package used for the 2N5458 transistor is TO-92, it is a low-power electronic component package and it is made with a mixture of epoxy and plastic material.

2N5458 JFET datasheet

2N5458 JFET datasheet
2N5458 JFET datasheet

If you need the datasheet in pdf please click this link

Electrical characteristics & applications description of 2N5458 transistor

The 2N5458 transistor is low power, high-gain JFET device used for applications like an amplifier and switching circuits.

Voltage characteristic

The drain to source voltage and drain to the gate voltage of the 2N5458 transistor is 25v, the voltage shows it is a low power device.

Gate to source reverse voltage and gate to the source breakdown voltage of 2n5458 transistor is -25v and gate to source cutoff voltage range is -0.5 to -7.0v.

Current characteristics

The gate current value is 10mA, this current value indicates the maximum allowable load of the 2N5458 transistor.

Power dissipation and max temperature 

The power dissipation of the 2N5458 transistor is 310mW, and the junction temperature is -65 to +150° C

Uses of 2N5458 JFET transistor

  • Amplifier circuits
  • Switching circuits
  • Sensor circuits
  • Low gain signal amplifier circuits
  • Detector circuits

Equivalent JFET transistor for 2N5458

The JFET transistors like 2n5457, 2n5459, nte312, and 2sk518 are the perfect equivalent transistors for sn5458.

The electrical characteristics of some of the transistors are different from 2n5458, at the replacement process you need to check and verify the specifications.

2n5458 vs 2n5457

The 2n5458 and 2n5457 transistors had almost the same electrical specifications, some of the specs like voltage cutoff, gate-source voltage, and admittance value are different for each transistor.

Drain characteristics curve of 2N5458 transistor 

Drain characteristics curve of 2N5458 transistor
Drain characteristics curve of 2N5458 transistor

The figure shows the drain characteristics of the 2N5458 transistor, the graph is plotted with ID vs VDS.

The graph shows the whole working of 2N5458 transistor, the curves are plotted with different gate to source voltage.

We can see when the current value a particular point, the voltage of the device gets saturated.

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