2n7000 MOSFET

2n7000 MOSFET
2n7000 MOSFET

2n7000 is an n-channel enhancement type MOSFET, used at low power switching applications such as analog switching as on microcontroller project circuits.

2n7000 is typically known as the general-purpose switching application MOSFET, due to this reason these types of MOSFET have enormous applications.

In this article we explain about 2n7000 MOSFET electrical and physical specification characteristics, this will help us to know more about this MOSFET device.

Electrical specifications & feature of 2n7000

  • 2n7000 is an n-channel enchantment type MOSFET device
  • Drain to source voltage (VDSS) is 60V
  • Drain to gate voltage (VDG) is 60V
  • Gate to source (VGSS) (continues) is +/-20V
  • Gate to source (VGSS) (non-repetitive) is +/-40V
  • The maximum drain current (continues) is 200mA
  • Maximum drain current (pulsed) is 500mA
  • Thermal resistance, junction to ambient is 312.5°C/W
  • Drain to source breakdown voltage (BVDSS) is 60V
  • Zero gate voltage drain current (VDSS) is 1uA
  • Gate to body leakage forward (IGSSF) is 10nA
  • Gate to the source threshold voltage (VGS (th)) is 0.8V
  • Drain to source on voltage (VDS (ON)) is 0.6V
  • Power dissipation (PD) is 400mW
  • Static Drain source on-resistance RDS (ON) ­is 1.2Ω
  • High-density cell design for low on-state resistance
  • Voltage controlled small signal switching MOSFET
  • High saturation current capability device
  • They are been used for low voltage and low current applications

Pinout details & device package of 2n7000 MOSFET

Pinout details of 2n7000 MOSFET
Pinout details of 2n7000 MOSFET

The 2n7000 MOSFET had the DGS PINOUT pattern, it is the most comfortable pinout for a MOSFET device used for switching devices.

We already mention that the 2n7000 MOSFET device is a general-purpose transistor used for low power switching applications, TO-92 is the device package used 2n7000 MOSFET device

Electrical specification description & application note of 2n7000 MOSFET

Voltage specs

Drain to gate voltage, drain to source voltage value is 60V, it is an average voltage value for a low power device.

Gate to source voltage of +/-20v, this must be a useful value for switching applications.

Drain to the source breakdown voltage of 60v and drain to source on the voltage of 0.6v, this breakdown voltage and on voltage value make 2n7000 as a general-purpose device.

Threshold voltage: gate to the source threshold voltage of 2n7000 MOSFET device is 0.8V, fast switching is the main feature of a MOSFET.

Current specs

The maximum drain current (continues) is 200mA and pulsed is 500mA, both these current values show the maximum load allocated on 2n7000.

Gate to body leakage current is 1uA, it is maximum leakage on this device.

Power dissipation

The power dissipation happens on 2n7000 MOSFET is 400mW, this value shows the maximum power capacity of the device on the operation.

Junction temperature & thermal resistance of 2n7000 MOSFET  

The junction and storage temperature of 2n7000 MOSFET is -55 to 150°C and the thermal resistance value is 312.5°C/W.

Applications of 2N7000 MOSFET

  • Servo motor controlling circuit
  • Power MOSFET gate driver circuit
  • Low power switching circuit
  • Motor driver applications
  • Relay driver circuits
  • Battery operating circuits
  • High-speed switching circuits

2n7000 MOSFET miniature switching circuit

2n7000 MOSFET miniature switching circuit
2n7000 MOSFET miniature switching circuit

The figure shows the switching model circuit using 2n7000, we can see the connection of switching a resistor is connected on the gate, the load is connected on the drain, and the source is grounded.

As when we pass a signal to MOSFET, the resistor regulates the voltage and passes over to the gate for switching, and after the action of MOSFET, the load will operate accordingly.

2N7000 MOSFET equivalent

The MOSFET device such as BS170, BC170, 1RFZ44, and IRF9Z34N is the equivalent for 2n7000.

The electrical and physical specifications of each of these transistors are the same as 2n7000, so we can easily replace 2n7000 MOSFET with these MOSFETs.

2N7000 vs 2N7002

Characteristics 2N7000 2N7002
Drain to source voltage (VDSS) 60V 60V
Drain to gate voltage (VDG) 60V 60V
Gate to source voltage (VGS) 20V 20V
Gate to source breakdown voltage (BVVSS) 60V 60V
Drain current (ID) 200mA 115mA
Power dissipation 400mW 350mW
Gate to body leakage current forward (IGSSF) 10nA 100nA
Gate to source threshold voltage (VGS(th)) 0.8V 1 to 2.5V
Zero gate voltage drain current (IDSS) 1uA 1uA
Package TO-92 TO-92

 

The 2n7000 vs 2n7002 are almost the equivalent for each other, we can see electrical specifications are the same for both MOSFET.

The voltage specs of each MOSFET device are the same, due to this reason both these devices have applications on low power applications.

But the current and threshold voltage specs of each MOSFET are different, 2n7000 have higher current specs and have higher switching speed.

2N7000 vs BS170

Characteristics 2N7000 BS170
Drain to source voltage (VDSS) 60V 60V
Drain to gate voltage (VDG) 60V 60V
Gate to source voltage (VGS) 20V 20V
Gate to source breakdown voltage (BVVSS) 60V 60V
Drain current (ID) 200mA 500mA
Power dissipation 400mW 830mW
Gate to body leakage current forward (IGSSF) 10nA
Gate to source threshold voltage (VGS(th)) 0.8V 0.8V
Zero gate voltage drain current (IDSS) 1uA 0.5uA
Package TO-92 TO-92

Both the 2n7000 and BS170 MOSFETs are the most identical device because their voltage specs such as terminal voltage and threshold voltage values are the same.

But in terms of current specs, BS170 has higher load ability, the power dissipation for BS170 is double that of 2n7000.

Both of them have the same MOSFET packages.

Characteristics graphs of 2n7000 MOSFET

transfer characteristics curves of 2n7000 MOSFET
transfer characteristics curves of 2n7000 MOSFET

The figure shows the transfer characteristics curves of 2n7000 MOSFET, the graph is plotted with drain current vs gate to source voltage vs threshold voltage.

We can see at an ideal condition, the increase of the transfer curve concerning temperature.

The transfer at the 2n7000 will decrease with a rise in temperature and gate to source voltage will vary.

safe operating area characteristics of 2n7000 MOSFET
safe operating area characteristics of 2n7000 MOSFET

The figure shows the safe operating area characteristics of 2n7000 MOSFET, the graph is plotted with drain current vs drain to source voltage.

The graph shows the maximum limit of switching, on-state resistance with current and voltage values.

Datasheet

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