2SB772/ B772 PNP transistor Datasheet
The 2sb772 is a PNP bipolar transistor type used at voltage regulator and amplifier circuits, it is a medium power general-purpose transistor type, in this article we explain different electrical and physical aspects of the B772 transistor.
2SB772/B772 PNP transistor electrical specification
- 2SB772 is an NPN BJT PNP transistor
- Collector to base voltage (VCB) is -60V
- Collector to emitter voltage (VCE) is -30V
- Emitter to base voltage (VEB) is -5V
- Collector to emitter saturation voltage (VCE (sat)) is -0.4 to -1.1V
- Collector current (IC) is -3A
- Base current (IB) is -1A
- Power dissipation (PD) is 5W
- Junction Temperature (TJ) is -65 to +150°C
- DC gain is 30 to 300hFE
- Transition frequency (FT) is 100MHz
PINOUT CONFIGURATION & PACKAGE OF B772 PNP transistor
The PINOUT configuration used at the 2SB772 transistor is ‘BCE’, it is a common transistor PINOUT pattern used at general-purpose transistors.
The component package used at 2SB772 transistor in TO-126 is a medium and low power transistor package, they are made with a mixture of plastic and epoxy material.
B772 SMD version transistor
The 2sb772 transistor has SMD version transistor, the name of surface mount version transistor is b772, and the SMD transistor packages used at they are, SOT-32 and SOT-89.
The electrical characteristics of SMD version 2sb772 transistor are almost the same, but there is a slight variation is there at voltage, frequency, and dc gain is shown by B772.
2SB772/B772 transistor electrical characteristic & application description
The 2SB772 or B772 is a medium power PNP transistor used for general purpose and medium-heavy applications, in this section we separately explain electrical characteristics with its applications.
Collector to base voltage is -60V, collector to emitter voltage is -30v, and emitter to base voltage is -5V, the voltage value shows that the 2SB772 transistor is perfect for the general-purpose voltage regulator and converter circuits.
Collector current is -3A and base current is -1A, it had a higher collector current value, this will support the transistor at driver circuits.
Low saturation voltage
The B772 transistor had a low collector to emitter saturation voltage value of -0.4v to -1.1v, this value is really helpful for switching operation.
DC current gain
The DC current gain of 2sb772 transistor is 30 to 300Hfe, the gain value is utilized at amplifier circuits and regulator circuits.
The transition frequency value of the B772 transistor is 100MHz, the frequency is useful at switching operation.
Power dissipation of 12.5W and junction temperature value of -65 to +150°C, the dissipation value indicate the maximum capacity of B772 transistor and temperature value indicates the heat withstanding capacity.
Uses of B772/2SB772 transistor
- Voltage regulation applications
- Relay driver
- Generic switching applications
- Audio power amplifier applications
- DC-DC converter circuit applications
B772 transistor amplifier circuit
The figure shows the push-pull amplifier circuit using B772 and its complement transistor D882.
It is a class AB amplifier circuit, the BC635 transistor is operated as the preamplifier, then at the final stage a combination of B772 and D882 transistor works as a push-pull amplifier and it makes a medium power output.
2SB772/B772 transistor equivalent
The equivalent transistor for B772 is MJE172, KSB772, 2N6407, 2SA738, BD386, and MJE234.
Each of the transistors is the perfect equivalent for 2SB772, the important electrical characteristics of each transistor are the same as B772.
But at the replacement process, we need to check very specific electrical specifications of transistors.
Complement transistor for B772
The 2SD882 or D882 is the NPN transistor complementary for the 2SB772 transistor, the electrical specifications of each transistor are much similar to each other.
A combination of 2SD882 and 2SB772 transistors are been used in amplifier circuit applications.
B772 vs B773
|Collector to base voltage (VCB)||-60V||-100V|
|Collector to emitter voltage (VCE)||-30V||-100V|
|Emitter to base voltage (VEB)||-5V||-6V|
|Collector current (IC)||-3A||-6A|
|Junction temperature (TJ)||-65 to +150°C||-65 to 150°C|
|Transition frequency (FT)||100MHz||40|
|Gain (hFE)||30 to 300hFE||80hFE|
Characteristics curves of B772/2SB772 transistor
The figure shows the DC gain characteristics of the B772 transistor, plots with dc gain vs collector current.
We can see at a specific electrical condition, the gain value is dipping with the increase in temperature but the current will increases towards a higher limit.
The figure shows the collector to emitter saturation voltage characteristics, which they plotted with collector-emitter voltage vs collector current.
From the graphical representation, we can see a lower value of collector to emitter saturation voltage value.