The MOSFET threshold voltage is the topic we discussing in this article, threshold voltage is an important electrical characteristic of field-effect transistor devices.

At MOSFET threshold voltage is also called the gate to source voltage, we know there are different types of MOSFETs are available but the most important division will be in terms of its polarity basis that is N-channel and P-channel MOSFETs. In this article, we include threshold voltage values of these MOSFET types and an equation for the threshold voltage at MOSFETs.

## MOSFET threshold voltage?

The MOSFET threshold voltage is the gate voltage or gate to source voltage for which the device gets trigger started.

The threshold voltage will be indicated as VT or VTH.

## MOSFET threshold voltage equation b =  kT/q 1n (NA/Ni)

NA = doping concentration

Ni = intrinsic concentration

k = Boltzmann’s constant

εSi = permittivity of silicon

Cox = gate oxide capacitance

Cox =  εox/ tox

Vfb = ϕms – Qfc/ Cox

Qfc = fixed charges due to silicon oxides

Φms = difference between silicon subtract and gate material

Or ## N channel MOSFET threshold voltage

The threshold voltage of n-channel MOSFET is a +VE value, which is between 0.7 to 1.0v.

## P channel MOSFET threshold voltage

The threshold voltage at p-channel MOSFET is a –VE value, which is between -2.0 to -4.0v.

The threshold voltage of the MOSFET is dependent on the doping density of the MOSFET device.