MPSA05 is an NPN bipolar transistor used mainly for voltage amplifier applications, this is why the specifications of the MPSA05 transistor are apt to produce a moderate gain.
Specification of MPSA05 transistor
- Collector to base voltage (VCB) is 60V
- Collector to emitter voltage (VCE) is 60V
- Emitter to base voltage (VEB) is 4V
- Collector to emitter breakdown voltage (V (BR) CE) is 60V
- Base to emitter on-voltage (VBE (ON)) is 2V
- Saturation voltage (VCE (SAT)) is 25V
- Collector current (IC) is 500mA
- Collector cutoff current (ICB) is 100nA
- Power dissipation (PD) is 625mW
- Transition frequency (FT) is 100MHz
- Maximum operating & storage temperature is -55 to +150°C
PINOUT configuration & Package details of MPSA05 transistor
Pin01 – emitter
Pin02 – base
Pin03 – collector
The PINOUT configuration at the MPSA05 transistor is EBC and the package used is TO-92, it is a general-purpose transistor package mostly used for a low power device, this is why they are made with a mixture of plastic and epoxy material.
MPSA05 transistor SMD version
The MMBTA05, SMBTA05, and PZTA05 are the SMD version transistors of MPSA05, each SMD version transistor had the same electrical specs as the MPSA05 transistor.
SMD version A05 package
The MMBTA05 (SOT-23), SMBTA05 (SOT-23), and PZTA05 (SOT-223), the surface mount transistor packages of each had almost the same PINOUT pattern.
Electrical specification & application description of MPSA05 transistor
Collector to base voltage and collector to emitter voltage of MPSA05 transistor is the same, 60V and emitter to base voltage is 4V, this voltage value states that they are the general-purpose transistor.
The base to emitter on-voltage is 1.2V, this voltage 0.7v, the increase of on-voltage is by the voltage divider network.
The collector to emitter saturation voltage of the MPSA05 transistor is 0.25V, this is a very important voltage value on the switching operation.
The collector current value is 500mA, this is the value of the maximum load at the transistor device and the collector cutoff current value is 100nA, it is current flow or power wasted when the device is at cutoff state.
DC current gain
The DC current gain of the MPSA05 transistor is 100hFE, it is an important factor when this transistor will work as an amplifier.
The transition frequency is 100MHz, it is the maximum frequency value allowable at this device.
Power dissipation & temperature range
The maximum dissipation of the MPSA05 transistor is 625mW, it is a common dissipation value for a low-power general purpose transistor, and the maximum temperature range is -55 to +150°C.
Uses of MPSA05 transistor
- Driver stage amplifier circuits
- Voltage amplifier circuits
- Switching operations
- Telecommunication circuits
- RF circuits
- Darlington pair
MPSA05 equivalent transistors
The transistors such as MPSA06, 2N7051, 2SC4145, BC538, 2N5551, 2N5833, and 2N5831, are the equivalent transistors of MPSA05.
The electrical specifications are the same, but on a replacement process, you need to check the specs.
MPSA05 vs BC537
|Collector to base voltage (VCB)||60V||60V|
|Collector to emitter voltage (VCE)||60V||60V|
|Emitter to base voltage (VEB)||4V||6V|
|Saturation voltage (VCE (sat))||0.25V||1.3V|
|Collector current (IC)||500mA||1A|
|Collector cut-off current (ICB)||100nA||100nA|
|Junction temperature (TJ)||-55 to 150°C||-55 to 150°C|
|Transition frequency (FT)||100MHZ||150MHZ|
|Gain (hFE)||100hFE||40 to 400hFE|
The electrical characteristics comparison table of MPSA05 vs BC537 shows us that, both the transistors had almost the same specs, but the current value and DC current gain are better for the BC537 transistor.
PNP complementary transistor for MPSA05
The MPSA55 is the complementary PNP transistor of MPSA05, both the transistor had the same specs but on opposite polarity, this is why both the transistor had the application on Darlington pair.
Characteristics curves of MPSA05 transistor
The figure shows the safe operating area curves of the MPSA05 transistor, each of the specifications are been represented on this graph with the maximum limit.
The figure shows the current gain curve of the MPSA05 transistor, the gain characteristics are almost like parabolic shape, this will show that this transistor had a much lower gain value with respect to other quantities.