MPSA18 is an NPN silicon high gain transistor, the main application based on this transistor is amplifier circuits, and in this article, we explain the main electrical and physical specs of MPSA18.
MPSA18 transistor specification and features
- MPSA18 is a NPN amplifier transistor
- Collector to base voltage (VCB) is 45V
- Collector to emitter voltage (VCE) is 45V
- Emitter to base voltage (VEB) is 5V
- Collector to emitter saturation voltage (VCE (sat)) is 08 to 0.3V
- Base to emitter on voltage (VBE (ON)) is 7V
- Collector current (IC) is 200mA
- The current cutoff current (ICB) is 1 to 50nA
- Power dissipation (PD) is 625mW
- Thermal resistance, junction to the case is (R th j-c) is 3°C/W
- Junction Temperature (TJ) is -55 to +150°C
- DC gain is 400 to 1500hFE
- Transition Frequency (TF) is 160MHz
- Noise figure (NF) is 5dB
- Small signal applications
- High gain
PINOUT CONFIGURATION & PACKAGE DETAILS OF MPSA18 transistor
The PINOUT configuration pattern of the MPSA18 transistor is EBC and the package used at this transistor is TO-92, it is a common high gain amplifier transistor, the package and PINOUT pattern will support the MPSA18 transistor on the board.
MPSA18 transistor datasheet
Electrical specification & application description
Collector to emitter voltage and the collector-base voltage value of MPSA18 transistor is 45V and emitter to base voltage is 6.5V, base to emitter on voltage is 0.7V, the voltage specs shows that MPSA18 is a good general-purpose transistor type.
The collector current is 200Ma, the 200mA is the maximum load allowable at the transistor, the collector cutoff current is 1 to 50Na, and it is the speed of operation of MPSA18.
Collector to emitter saturation voltage is 0.08v to 0.3v, the least voltage saturation value shows that this transistor switches very faster.
The transition frequency value is 160MHz, this is the maximum frequency value allows in this transistor.
DC current gain
The DC current gain value is the important feature of the MPSA18 transistor, the DC gain of 400 to 1500, states that this transistor will produce a higher amount of gain.
Due to this reason, MPSA18 transistors had more applications on amplifier circuits.
The noise figure value of 1.5dB, is a lower value for an amplification component.
Dissipation & temperature capacity
The power dissipation that happened at MPSA18 is 625mW, this is just like a general-purpose transistor.
Maximum operating and storage temperature value of -55 to +150°C, this transistor had a moderate level of heat capacity.
Applications of MPSA18 transistor
- Preamp circuits
- Low power amplifier circuits
- Final stages of amplifiers
- General-purpose switching applications
- Small signal applications
- Voice recorder applications
- RF amplifier circuits
Preamplifier circuits based on MPSA18 transistor
The preamplifier circuit consists of 5 MPSA18 transistors with some passive components.
The idea behind the preamplifier is to strengthen the audio signal to become the main amplifier stage, the 5 stage MPSA18 transistor makes the audio signal amplified.
MPSA18 transistor equivalent
The transistors such as KSP05, KSP06, MPSA05, MPSW05G, and ZTX692B are the equivalent transistor of MPSA18.
All the transistors on this list had the same electrical and physical specs same as the MPSA18 transistor.
But we need to check and verify the specs become the replacement of MPSA18 with any of these transistors.
MPSA18 vs 2n5088 vs MPSA13
Characteristics MPSA18 2N5088 MPSA13 (Darlington)
Collector to base voltage (VCB) 45V 35V 30V
Collector to emitter voltage (VCE) 45V 30V 30V
Emitter to base voltage (VEB) 6.5V 4.5V 10V
Collector current (IC) 200mA 100mA 500mA
Power dissipation 625mW 625mW 625mW
Junction temperature (TJ) -55 to 150°C -55 to 150°C -55 to +150°C
Transition frequency (FT) 160MHZ 50MHZ 125MHz
Noise (NF) 1.5dB 3dB -
Gain (hFE) 400 to 1500hFE - 5000 to 10000hFE
Package TO-92 TO-92 TO-92
The comparison of MPSA18 vs 2N5088 vs MPSA13 transistors shows that each of these is good at amplifier circuits.
The voltage, current or frequency value of each transistor is almost the same, but the DC current gain value is different from each other, the MPSA13 had 5000 to 10000hFE gain value, this is because MPSA13 is a Darlington transistor.
MPSA18 transistor characteristic curves
The figure shows the DC current gain characteristics of the MPSA18 transistor, plotted with DC current gain vs collector current gain.
The DC gain characteristic is plotted on a specific voltage value, the curves are based on temperature values.
At different temperature ranges, the gain value increases flatly with the collector current.
The figure shows the two characteristic curves based on the noise figure, the noise figure increases with an increase in collector current value.
The characteristic curve is plotted on a specific bandwidth and frequency, the noise figure increases quickly when the current collector increases.