MPSA18 transistor

MPSA18 transistor
MPSA18 transistor

MPSA18 is an NPN silicon high gain transistor, the main application based on this transistor is amplifier circuits, and in this article, we explain the main electrical and physical specs of MPSA18.

MPSA18 transistor specification and features

  • MPSA18 is a NPN amplifier transistor
  • Collector to base voltage (VCB) is 45V
  • Collector to emitter voltage (VCE) is 45V
  • Emitter to base voltage (VEB) is 5V
  • Collector to emitter saturation voltage (VCE (sat)) is 08 to 0.3V
  • Base to emitter on voltage (VBE (ON)) is 7V
  • Collector current (IC) is 200mA
  • The current cutoff current (ICB) is 1 to 50nA
  • Power dissipation (PD) is 625mW
  • Thermal resistance, junction to the case is (R th j-c) is 3°C/W
  • Junction Temperature (TJ) is -55 to +150°C
  • DC gain is 400 to 1500hFE
  • Transition Frequency (TF) is 160MHz
  • Noise figure (NF) is 5dB
  • Small signal applications
  • High gain

PINOUT CONFIGURATION & PACKAGE DETAILS OF MPSA18 transistor

PINOUT CONFIGURATION of MPSA18 transistor
PINOUT CONFIGURATION of MPSA18 transistor

The PINOUT configuration pattern of the MPSA18 transistor is EBC and the package used at this transistor is TO-92, it is a common high gain amplifier transistor, the package and PINOUT pattern will support the MPSA18 transistor on the board.

MPSA18 transistor datasheet

MPSA18 transistor datasheet
MPSA18 transistor datasheet

Electrical specification & application description

Voltage characteristic

Collector to emitter voltage and the collector-base voltage value of MPSA18 transistor is 45V and emitter to base voltage is 6.5V, base to emitter on voltage is 0.7V, the voltage specs shows that MPSA18 is a good general-purpose transistor type.

Current characteristic

The collector current is 200Ma, the 200mA is the maximum load allowable at the transistor, the collector cutoff current is 1 to 50Na, and it is the speed of operation of MPSA18.

Voltage saturation

Collector to emitter saturation voltage is 0.08v to 0.3v, the least voltage saturation value shows that this transistor switches very faster.

Transition frequency

The transition frequency value is 160MHz, this is the maximum frequency value allows in this transistor.

DC current gain

The DC current gain value is the important feature of the MPSA18 transistor, the DC gain of 400 to 1500, states that this transistor will produce a higher amount of gain.

Due to this reason, MPSA18 transistors had more applications on amplifier circuits.

Noise figure

The noise figure value of 1.5dB, is a lower value for an amplification component.

Dissipation & temperature capacity

The power dissipation that happened at MPSA18 is 625mW, this is just like a general-purpose transistor.

Maximum operating and storage temperature value of -55 to +150°C, this transistor had a moderate level of heat capacity.

Applications of MPSA18 transistor

  • Preamp circuits
  • Low power amplifier circuits
  • Final stages of amplifiers
  • General-purpose switching applications
  • Small signal applications
  • Voice recorder applications
  • RF amplifier circuits

Preamplifier circuits based on MPSA18 transistor

Preamplifier circuits based on MPSA18 transistor
Preamplifier circuits based on MPSA18 transistor

The preamplifier circuit consists of 5 MPSA18 transistors with some passive components.

The idea behind the preamplifier is to strengthen the audio signal to become the main amplifier stage, the 5 stage MPSA18 transistor makes the audio signal amplified.

MPSA18 transistor equivalent 

The transistors such as KSP05, KSP06, MPSA05, MPSW05G, and ZTX692B are the equivalent transistor of MPSA18.

All the transistors on this list had the same electrical and physical specs same as the MPSA18 transistor.

But we need to check and verify the specs become the replacement of MPSA18 with any of these transistors.

MPSA18 vs 2n5088 vs MPSA13

Characteristics MPSA18 2N5088 MPSA13 (Darlington)
Collector to base voltage (VCB)45V35V30V
Collector to emitter voltage (VCE)45V30V30V
Emitter to base voltage (VEB)6.5V4.5V10V
Collector current (IC)200mA100mA500mA
Power dissipation625mW625mW625mW
Junction temperature (TJ)-55 to 150°C-55 to 150°C-55 to +150°C
Transition frequency (FT)160MHZ50MHZ125MHz
Noise (NF)1.5dB3dB-
Gain (hFE)400 to 1500hFE-5000 to 10000hFE
PackageTO-92TO-92TO-92

The comparison of MPSA18 vs 2N5088 vs MPSA13 transistors shows that each of these is good at amplifier circuits.

The voltage, current or frequency value of each transistor is almost the same, but the DC current gain value is different from each other, the MPSA13 had 5000 to 10000hFE gain value, this is because MPSA13 is a Darlington transistor.

MPSA18 transistor characteristic curves

DC current gain characteristics of the MPSA18 transistor,
DC current gain characteristics of the MPSA18 transistor,

The figure shows the DC current gain characteristics of the MPSA18 transistor, plotted with DC current gain vs collector current gain.

The DC gain characteristic is plotted on a specific voltage value, the curves are based on temperature values.

At different temperature ranges, the gain value increases flatly with the collector current.

two characteristic curves based on the noise figure
two characteristic curves based on the noise figure

The figure shows the two characteristic curves based on the noise figure, the noise figure increases with an increase in collector current value.

The characteristic curve is plotted on a specific bandwidth and frequency, the noise figure increases quickly when the current collector increases.

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