In this article we are going to explain to you the MOSFET parameters, we know all the active and passive electronic components have characteristics pros, and cons.
The characteristics of each of the devices will be different from each other, so in this post, we listed out the MOSFET parameters and explain each parameter very briefly.
MOSFET parameters explained
MOSFET Blocking voltage
It is the maximum amount of voltage that can be applied to the MOSFET.
The ON-resistance depends on the power loss of the MOSFET.
MOSFET temperature effect
It is the maximum junction temperature, it will determine its ability to extract the heat from its body.
Drain current of MOSFET
The drain current of the MOSFET will measure the maximum ability to drive a specific load.
Safe operating area of MOSFET
It will determine the amount of voltage and current, which is safe for its normal operation.
Threshold voltage of MOSFET
It is the maximum gate to source biasing required to form a conducting layer between the source and drain region.
Maximum allowable power dissipation of a MOSFET
It is the maximum power dissipation or junction temperature which is allowed at a MOSFET without damaging it.
Current gain of MOSFET
The current gain of the MOSFET is fully dependent on the circuit configuration.
Early voltage of MOSFET
The early voltage describes the drain current in the active or at the saturation region of operation with VDS.
Body effect of MOSFET
A change in MOSFET threshold voltage will result from a voltage difference between the MOSFET source and body terminal.
Oxide capacitance of MOSFET
The oxide capacitance of MOSFET (Cox) is the capacitance of a parallel plate capacitor per unit gate area.
Transconductance of MOSFET
It is the change in the drain current by the small change in the gate to source voltage with a connected drain to source voltage.