Velocity saturation in MOSFET
In this article we explain to you about velocity saturation in MOSFET, the term velocity saturation will indicate the mobility of the charged carriers and its saturation state.
And the velocity saturation is not limited to MOSFET, it is a universal parameter for every charge-carrying material.
In this post, we explain velocity saturation and its effects on the MOSFET device.
- The velocity of charged carriers at the current-carrying material is directly proportional to the electric field formed at the material, but when we increase the electric field towards a certain limit, it will reach a saturation state that velocity is called saturation velocity.
- It comes to a semiconductor material or device, velocity saturation is the maximum velocity a charge carrier attain at it, and we know the charged carriers are electrons, so electrons attain a very high electric field.
- The charged carriers normally move at an average drift speed property to electric field strength.
MOSFET velocity saturation
- The saturation velocity mostly depends on the material used to make the semiconductor device
- At the MOSFET, the theory behind velocity saturation remains the same but proper indications are been explain.
- The electric field at the MOSFET channel reaches a critical value, and the velocity of carriers comes to saturation state, and the mobility of charges decreases.
- We know at MOSFET charged carriers are electrons and holes, the saturation velocity of it is 107 cm/s.
- Generally, the electric field strength at which carrier velocity saturation is usually on the 10 – 100kv/cm.